Product Description:
The 4N25/A, 4N26, 4N27, and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
| LED |
|
|
| Forward voltage |
|
1.5 volts |
| Forward current |
|
10 mA |
| Detector |
|
|
| Collector Emitter voltage |
|
80 volts max |
| Collector current |
|
20 mA |
| General |
|
|
| Channels |
|
1 |
| Insulation voltage |
|
7500 Vrms |
| Operating temperature |
|
-55 to +110 °C |
| Current transfer ratio |
|
70 % max. |
| Package |
|
DIL-6 |
